SINGLE EVENT EFFECT TEST RESULTS FOR CANDIDATE SPACECRAFT ELECTRONICS
Kenneth A. LaBel
(301) 286-9936
label@gsfc.nasa.gov
Amy K. Moran
(301) 286-1412
amy.k.moran.1@gsfc.nasa.gov or ken.
NASA/GSFC, Code 735


We present a collection of both heavy ion and proton single event effect (SEE) ground test results performed in the past year for candidate spacecraft electronics. A variety of digital, analog, and fiber optic devices were tested, including DRAMs, FPGAs and fiber links.

The SEE test objective was to determine the Linear Energy Transfer (LET) threshold (the minimum LET value to cause an effect at a fluence of 1E7 particles/cm2) and saturation cross section of candidate spacecraft electronics for Single Event Upset (SEU) and Single Event Latchup (SEL) due to protons and heavy ions.

TEST FACILITIES

Heavy Ion experiments were performed at the Brookhaven National Laboratories (BNL) Single Event Upset Test Facility (SEUTF), and at the Texas A&M University Cyclotron. Proton SEE testing was performed at both the University of California at Davis (UCD) and the University of Indiana (UICF) at Bloomington cyclotron facilities. All tests were performed between February 1996 and January 1997. Details on ions and energies used are available upon request.

TEST METHOD

Three modes of testing were used, depending on the DUT. They are:

SEU was defined on a device-by-device basis, depending on device functionality and project requirements. All tests were performed at room temperature, unless noted.

TEST RESULTS

Table 1 summarizes the devices tested for SEE and the test results, using the following conventions:

 
Table 1 
DEVICE FUNCTION MANUF. TEST RESULTS NOTES
RAM (Random Access Memory)
Luna-ES2 4Mx4 DRAM  IBM HI SEU < 3.38 

SEL > 11.5 

KM48V8100AS-16 64M DRAM  Samsung P _ ~ 1.03E-14/bit 

(single bit upset only) 

voltage-dependent
628128 128kx8 SRAM  Hitachi/ 

ELMO 

P _ ~ 1.2E-13/bit  pattern-sensitive
88130L45PC 128kx8 SRAM  Hitachi/ EDI P _ ~ 1.7E-13/bit  not pattern-sensitive
MT5C1008CW-25 128kx8 SRAM  Micron P _ ~ 3E-7 
_PD4216400-60 4Mx4 DRAM  NEC P _ ~ 7.76E-12/bit 

(single bit upset only) 

TMS416400DJ-60 4Mx4 DRAM  TI HI SEU = 3 

P _ ~ 5.42E-12/bit 

(single bit upset only) 

TMS416400 4Mx4 DRAM  TI HI SEU ~ 2 (single bit 

upset only) 

FPs (Field Programmable Gate Arrays)
AT6002-JC FPGA  Atmel HI SEU = 7-8 

SEL = 11-11.4 

P data errors, no 

reconfig. 

3090A FPGA  Xilinx HI SEU = 4-7 

SEL = 4-7 

ATT2C04-2 ORCA FPGA  AT&T HI SEU < 7.88 

SEL < 7.88 

CLAy-31 RAM-based 

FPGA 

NSC HI SEU ~ 5 

SEL > 90 

high-temp HI SEL ~ 11 

P data, reconfig. errors 

anomalous current change 
14100A FPGA  Actel HI SEU ~ 8 (S, I/O 

mods), 21 (C mods) 

P S, I/O mod errors 

1460A FPGA  Actel HI SEU ~ 8 (S, I/O 

mods), 21 (C mods) 

P S, I/O mod errors 

 
Data Transmission
HSSR-7110 Power 

MOSFET 

Optocoupler 

HP HI no SEU, SEL 

P no SEU, SEL 

UT63M147-BPC 1553 

Transceiver 

UTMC HI SEU ~ 11 

SEL > 35 

DR1773 1773 

Transceiver 

Boeing P _ ~ 1.4E-10 (RX) 

_ < 2E-11 (TX) 

attenuation-, angle-dependent 
2706T Fibre Channel Link Transmitter  Force, Inc. P TBD 
2706R Fibre Channel Link Receiver  Force, Inc. P TBD 
2706T Fibre Channel Link Transmitter  AT&T P TBD 
2706R Fibre Channel Link Receiver  AT&T P TBD 
AM7968  TAXI 

Transmitter 

AMD HI SEU < 3.39 

SEL > 53.2 

P _ ~ 5.27E-10(data) 

_ ~ 6.6E-10(sync) 

AM7969  TAXI Receiver  AMD HI SEU < 3.39 

SEL > 53.2 

P _ ~ 2.56E-10 (data) 

_ ~ 3E-10 (sync) 

Other
5690R-D15 DC-DC Converter  MDI HI SEU > 82.7 

SEL > 82.7 

M67204EV-50 4kx9 FIFO  Matra P _ ~ 8.58E-14(bit) 

_ ~ 8.3E-13(pointer) 

_ ~ 2E-12(control) 

DAC8800 Octal 8-bit DAC  Analog 

Devices 

HI SEU > 80 

SEL > 80 

CS5012A 12-bit ADC  Crystal 

Semi. 

HI SEU = 3.5 - 4.8 

SEL ~ 11.4 

laser test also performed 
AD630 Balanced Modulator  Analog 

Devices 

HI SEU < 7.4 
AD652 Voltage-to- 

Frequency 

Converter 

Analog 

Devices 

HI SEU ~ 7.4 

SEL >> 15 

For more complete results, try our homepage (http://flick.gsfc.nasa.gov/radhome.htm) or contact us via e-mail.
Recommendations

Following heavy ion and proton testing , devices generally are categorized into one of four categories for recommendation to the flight project of interest:

  1. relatively hard or immune to SEEs and recommended for spaceflight
  2. somewhat susceptible to SEEs; may need some error detection and correction (EDAC) when used in an application
  3. fairly soft, and very susceptible to SEEs; use with great caution, if at all. Intensive EDAC schemes may be necessary as these devices have potentially high error rates.
  4. not recommended for spaceflight. Destructive conditions, such as latchup, total dose failure or burnout, were seen in these devices at low LETs.
Recommendations are available on our homepage when applicable.


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