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Literatures/ References


Literatures/References

  1. G. Harman, Wire Bonding in Microelectronics Materials, Processes, Reliability and Yield, 2nd Edition, McGraw Hill, 1997, pp. 68-70.
  2. Horsting, C.W., “Purple Plague and Gold Purity,” 10th Annual Proc. IEEE Reliability Physics Symp., Las Vegas, Nevada, 1972, pp. 155-158.
  3. Philofsky, E., “Intermetallic Formation in Gold-Aluminum Systems,” Solid State Electronics, Vol. 13, 1970, pp. 1391-1399.
  4. Philofsky, E., “Design Limits when Using Gold-Aluminum Bonds,” Proc. IEEE Reliability Physics Symp., Las Vegas, Nevada, April 1971, pp. 11-16.
  5. Philofsky, E., “Purple Plague Revisited,” Proc. IEEE Reliability Physics Symp., Las Vegas, Nevada, April 1970, pp. 177-185.
  6. Ramsey, T.H., and Alfaro, C., “The Effect of Ultrasonic Frequency in Intermetallic Reactivity of Au-Al Bonds,” Solid State Technology, Vol. 34, Dec.1991, pp.37-38.
  7. See, for example, Hanson, M., The Constitution of Binary Phase Diagrams, 2d Ed., McGraw-Hill, New York, 1958
  8. Dunn, C.F., and McPherson, J.W., “Temperature-Cycling Acceleration Factors for Aluminum Metallization Failure in VLSI Applications,” Proc. IEEE IRPS, New Orleans, Louisiana, 1990, pp. 252-255.
  9. Gerling, W., “Electrical and Physical Characterization of Gold-Ball Bonds on Aluminum Layers,” IEEE ECC, New Orleans, Louisiana, May 14-16, 1984, pp. 13-20.
  10. Weaver, C., and Brown, L.C., “Diffusion in Evaporated Films of Gold-Aluminum,” Phil, Mag., Vol.7, pp. 1-16.
  11. Schnable, G.L., and Keen, R.S., RADC Contract No. AF 30, 1966.
  12. Kashiwabara, M., and Hattori, S., “Formation of Al-Au Intermetallic Compounds and Resistance Increase for Ultrasonic Al Wire Bonding,” Rev. of the Elect. Communications Lab. (NTT), Vol. 17, Sept. 1969, pp.1001-1013.
  13. Onishi, M., and Fukumoto, K., “Diffusion Formation of Intermetallic Compounds in Au-Al Couples by Use of Evaporated Al Films,” Jap. J. Met. Soc., 1974, pp. 38-46.
  14. Chen, G.K.C., “On the Physics of Purple-Plague Formation, and the Observation of Purple Plague in Ultrasonically-Joined Gold-Aluminum Bonds,” IEEE Trans. on PMP, Vol. 3, 1967, pp. 149-155.
  15. Anderson, J.H., and Cox, W.P., “ Failure Modes in Gold-Aluminum Thermocompression Bonds,” IEEE Trans. Reliability, Vol. 18, 1969, pp. 206-211.
  16. Charles, H.K. Jr., and Clatterbaugh, G.V., “Ball Bond Shearing- A Complement to the Wire Bond Pull Test,” Intl. J. Hybrid Micro., Vol. 6, 1983, pp. 171-186.
  17. Maiocco, L., Smyers, D., Munroe, P.R., and Baker, I., “Correlation between Electrical Resistance and Microstructure in Gold Wirebonds on Aluminum Films,” IEEE Trans. on CHMT, Vol. 13, September 1990, pp. 592-595.
  18. Murcko, R.M., Susko, R.A., and Lauffer, J.M., “Resistance Drift in Aluminum to Gold Ultrasonic Wire Bonds,” IEEE Trans. on CHMT, Vol. 14, December 1991, pp.843-847.
  19. Majni, G., and Ottaviani, G., “Au-Al Compound Formation by Thin Film Interactions,” J. Crystal Growth, Vol. 47, pp. 583-588, 1979. Also see, J. Appl. Phys., Vol. 52, June 1981, pp.4047-4052.
  20. White, M.L., Serpiello, J.W., Stringy, K.M., and Rosenzweig, W., “The Use of Silicone RTV Rubber for Alpha Particle Protection on Silicon Integrated Circuits,” Proc. 19th IRPS, Orlando, Florida, April 7-9, 1981, pp. 43-47.
  21. Shih, D.Y., and Ficalora, P.J., “The Reduction of Au-Al Intermetallic Formation and Electromigration in Hydrogen Environments,” 16th Proc. IEEE IRPS, San Diego, California, 1978, pp. 268-272.
  22. Horowitz, S.J., Felton, J.J., Gerry, D.J., Larry, J.R. and Rosenberg, R.M., “Recent Developments in Gold Conductor Bonding Performance and Failure Mechanisms,” Solid State Technology, Vol. 22, March 1979, pp.37-44.
  23. Hund, T.D., and Plunkett, P.V., “Improving Thermosonic Gold Ball Bond Reliability,” IEEE Trans. on CHMT, Vol. 8, 1985,pp. 446-456.
  24. Goldstein, J.L.F., Tuckerman, D.B., Kim, P.C., and Fernandez, A., “A Novel Flip-Chip Process,” 1995 Proc. SMI, San Jose, California, Aug. 29-31, 1995, pp. 59-71.
  25. Larson, E.N., and Brock, M.J., “Development of a Single Point Gold Bump Process for TAB Applications,” Proc. Of 1993 Intl. Conf. On Multichip Modules, Denver, Colorado, April 14-16, 1993, pp. 391-397.
  26. Nowicki, R.S., “Improving Metallization Reliability at the Component Level,” Proc. 1992 Intl. Symp. On Microelectronics (ISHM). San Francisco, California, Oct. 19-21, 1992, pp.731-736.
  27. Tung, C.H., Kim, Y-S., and Ghang, S-M., “Tape Automated Bonding Inner Lead Bonded Devices (TAB/ILB) Failure Analysis,” IEEE Trans. on CHMT, Vol. 16, May 1993, pp.304-310.
  28. Tjhia, E., and Nguyen, T., “Bump Metallurgies for Tape Automated Bonding (TAB) in Ceramic Packages,” Proc. 1992 Intl, Symp. On Microelectronics (ISHM), San Francisco, California, Oct. 19-21, 1992, pp. 421-426.
  29. Ueno, H., “Reliable Au Wire Bonding to Al/Ti/Al Pad,” Jap. J. Appl. Phys., Vol. 32, 1993, pp. 2157-2161.
  30. Paulson, W.M., and Lorigan, R.P., “The Effect of Impurities in the Corrosion of Aluminum Metallization,” Proc. IEEE IRPS, Las Vegas, Nevada, April 20-22, 1976, pp.42-47.
  31. Thomas, R.E., Winchell, V., James, K., and Scharr, T., “Plastic Outgassing Induced Wire Bond Failure,” 27th Proc. IEEE Electronics Components Conf., Arlington, Virginia, May 16-18, 1977, pp. 182-187.
  32. Richie, R.J., and Andrews, D.M., “CF4/02 Plasma Accelerated Aluminum Metallization Corrosion in Plastic Encapsulated ICs in the Presence of Contaminated Die Attach Epoxies,” 19th IEEE IRPS, Orlando, Florida, April 7-9, 1981, pp.88-92.
  33. Gale, R.J., “Epoxy Degradation Induced Au-Al Intermetallic Void Formation in Plastic Encapsulated MOS Memories,” 22nd IEEE IRPS, Las Vegas, Nevada, April 3-5, 1984, pp. 37-47.
  34. Khan, M.M., and Fatemi, H., “Gold-Aluminum Bond Failure Induced by Halogenated Additives in Epoxy Molding Compounds,” Proc. 1986 Intl. Symp. On Microelectronics (ISHM), Atlanta, Georgia, Oct. 6-8, 1986, pp. 420-427.
  35. Klein, H.P., “Dry Corrosion in Gold-Aluminum Ball Bonds,” Proc. 5th Intl. Conf. On Quality in Electronic Components, Bordeaux, France, Oct. 7-10, 1991, pp. 889-897.
  36. Gallo, A.A., “Effect on Mold Compound Components on Moisture-Induced Degradation of Gold-Aluminum Bonds in Epoxy Encapsulated Devices,” Proc. 1990 IEEE IRPS, 1990, pp. 244-251.
  37. Ritz, K.N., Stacy, W.T., and Broadbent, E.K., “The Microstructure of Ball Bond Corrosion Failures,” 25th Annual Proc. IEEE Reliability Physics Symp., April 1987, San Diego, California, pp. 28-33.
  38. Lum, R.M., and Feinstein, L.G., “Investigation of the Molecular Processes Controlling Corrosion Failure Mechanisms in Plastic Encapsulated Semiconductor Devices,” 30th Proc. ECC, San Francisco, California, April 28-30, 1980, pp. 113-120.
  39. Nesheim, J.K., “The Effects of Ionic and Organic Contamination on Wirebond Reliability,” Proc. 1984 Intl. Symp. on Microelectronics (ISHM), Dallas, Texas, Sept. 17-19, 1984, pp.70-78.
  40. Pavio, J., Jung, R., Doering, C., Roebuck, R., and Franzone, M., “Working Around the Fluorine Factor in Wire Bond Reliability,” Proc. 1984 Intl. Symp. on Microelectronics (ISHM), Dallas, Texas, Sept. 17-19, 1984, pp.0428-432.
  41. Lee, W-Y., Eldridge, J.M., and Schwartz, G.C., “Reactive Ion Etching Induced Corrosion of Al and Al-Cu Films,” J. Appl. Phys., Vol. 52, April 1981, pp.2994-2999.
  42. Graves, J.F., and Gurany, W., “Reliability Effects of Flourine Contamination of Aluminum bonding Pads on Semiconductor Chips,” 32nd Proc. ECC, San Diego, California, May 10-12, 1982, pp. 266-267.
  43. Forrest, N.H., “Reliability Aspects of Minute Amounts of Chlorine on Wire Bonds Exposed to Pre-Seal Burn-In,” Intl. J. Hybrid Microelectronics, Vol. 5, Nov. 1982, pp. 549-551. (Note: Figures omitted from paper-contact its author.)
  44. Gustafsson, K., and Lindborg, U., “Chlorine Content in and Life of Plastic Encapsulated Micro-Circuits,” 37th Proc. ECC, Boston, Massachusetts, May 11-13, 1987, pp.491-499.
  45. Blish, R.C.II, and Parobek, L., “Wire Bond Integrity Test Chip,” 21st Proc. IEEE IRPS, Phoenix, Arizona, April 5-7, 1983, pp. 142-147.
  46. Ahmad, S., Blish, R.C.II, Corbett, T., King, J., and Shirley, G., “Effect of Bromine Concentration in Molding Compounds on Gold Ball Bonds to Aluminum Bonding Pads,” IEEE Trans. on CHMT, Vol. 9, 1986, pp. 379-385.
  47. Koeninger, V., Uchida, H.H., and Fromm, E., “Degradation of Gold-Aluminum Ball Bonds by Aging and Contamination,” IEEE Trans. on CHMT, Part A, Vol. 18, Dec. 1995, pp. 835-841.
  48. Kern, W., “Radiochemical Study of Semiconductor Surface Contamination, I. Adsorption of Reagent components,” RCA Review, June 1970, pp. 224-228.
  49. Charles, H.K. Jr., Romeneske, B.M., Wagner, G.D., Benson, R.C., and Uy, O.M., “The Influence of Contamination in Aluminum-Gold Intermetallics,” 20th Proc. IRPS, San Diego, California, March 30-31, 1982, pp. 128-139.
  50. Khan, M.M., Tarter, T.S., and Fatemi, H., “ Sluminum Bond Pad Contamination by Thermal Outgassing of Organic Material from Silver-Filled Epoxy Adhesives,” IEEE Trans. on CHMT, Vol. 10, 1987, pp. 586-592.
  51. Plunkett, P.V., and Dalporte, J.F., “Low Temperature Void Formation in Gold-Aluminum Contacts,” 32nd Proc. ECC, San Diego, California, CHMT, May 10-12, 1982, pp.421-427.
  52. Kurtz, J., Cousens, D., and Dufour, M., “Copper Wire Ball Bonding,” 34th Proc. ECC, New Orleans, Louisiana, May 14-16, 1984, pp. 1-5.
  53. Hirota, J., Machida, K., Okuda, T., Shimotomai, M., and Kawanaka, R., “The Development of Copper Wire Bonding for Plastic Molded Semiconductor Packages,” 35th Proc. IEEE ECC, Washington, D.C., May 20-22, 1985, pp.116-121.
  54. Atsumi, K., Ando, T., Kobayashi, M., and Usuda, O., “Ball Bonding Technique for Copper Wire,” 36th Proc. ECC, Seattle, Washington, May 5-7, 1986, pp.312-317.
  55. Levine, L., and Shaeffer, M., “Copper Ball Bonding,” Semiconductor International, Aug. 1986, pp. 126-129.
  56. Onuki, J., Koizumi, M., and Araki, L., “Investigation on the Reliability of Copper Ball Bonds to Aluminum Electrodes,” IEEE Trans. on CHMT, Vol. 10, 1987, pp. 550-555.
  57. Riches, S.T., and Stockham, N.R., “Ultrasonic Ball/Wedge Bonding of Fine Cu Wire,” Proc, 6th European Microelect. Conf. (ISHM), Bournemouth, England, June 3-5,1987, pp. 27-33.
  58. Khoury, S.L., Burkhard, D.J., Galloway, D.P., and Scharr, T.A., “A Comparison of Copper and Gold Wire Bonding on Integrated Circuit Devices,” IEEE Trans. on CHMT, Vol. 13, No. 4, Dec. 1990, pp. 673-681.
  59. Nguyen, L.T., McDonald, D., and Danker, A.R., “Optimization of Copper Wire Bonding on Al-Cu Metallization,” IEEE Trans. on CPMT, Part A, Vol. 18, June 1995, pp. 423-429.
  60. Olsen, D.R., and James, K.L., “Evaluation of the Potential Reliability Effects of Ambient Atmosphere on Aluminum-Copper Bonding in Semiconductor Products,” IEEE Trans. on CHMT, Vol. 7, 1984, pp. 357-362.
  61. Johnston, C.N., Susko, R.A., Sicliano, J.V., and Murcko, R.J., “Temperature Dependent Wear-Out Mechanism for Aluminum/Copper Wire Bonds,” Proc. Intl. Microelectronics Conf., 1991, Orlando, Florida, Oct. 23-24, 1991, pp. 292-296.
  62. Totta, P., “Thin Films: Interdiffusion and Reactions,” J. Vac. Sci. Technology, Vol. 14, No. 26, 1977. Also see Zahavi, J., Rotel, M., Huang, H.C.W., and Totta, P.A., “Corrosion Behavior of AL-CU Alloy Thin Films in Microelectronics,” Proc. of the Intl. Congress on Metallic Corrosion, Toronto, Canada, June 3-7, 1984, pp.311-316.
  63. Weston, D., Wilson, S.R., and Kottke, M., “Microcorrosion of Al-Cu and Al-Cu-Si Alloys of the Metallization with Subsequent Aqueous Photolithographic Processing,” J. Vac. Soc., Vol. A8, May/June 1990, pp. 2025-2032.
  64. Thomas, S., and Berg, H.M., “Micro-Corrosion of Al-Cu Bonding Pads,” 23rd Proc. IRPS, Orlando, Florida, March 26-28, 1985, pp.153-153.
  65. Pignataro, S., Torrisi, A., and Puglisi, O., “Influence of Surface Chemical Composition on the Reliability of Al/Cu Bond in Electronic Devices,” Applied Surface Science, Vol. 25, 1986, pp. 127-136.
  66. Pinnel, M.R., and Bennett, J.E., “Mass Diffusion in Polycrystalline Copper/ Electroplated Gold Planar Couples,” Met. Trans., Vol. 3, July 1972, pp.1989-1997.
  67. Feinstein, L.G., and Bindell, J.B., “The Failure of Aged Cu-Au Thin Films by Kirkendall Porosity,” Thin Solid Films, Vol. 62, 1979, pp. 37-47.
  68. Feinstein, L.G., and Pagano, R.J., “Degradation of Thermocompression Bonds to Ti-Cu-Au and Ti-Cu by Thermal Aging,” Proc. ECC, Cherry Hill, New Jersey, May 14-16, 1979, pp. 346-354.
  69. Hall, P.M., Panousis, N.T., and Menzel, P.R., “Strength of Gold-Plated Copper Leads on Thin Film Circuits Under Accelerated Aging,” IEEE Trans. on Parts, Hybrids, and Packaging, Vol. 11, No. 3, Sept. 1975, pp. 202-205.
  70. Pitt, V.A., and Needes, C.R.S., “Thermosonic Gold Wire Bonding to Copper Conductors,” IEEE Trans. CHMT, Vol. 5, No.4, Dec. 1982, pp. 435-440.
  71. Lang, B., and Pinamaneni, S., “Thermosonic Gold Wire Bonding to Precious-Metal-Free Copper Leadframes,” 38th Proc. IEEE Electronic Components Conf., Los Angeles, California, May 9-11, 1988, pp. 546-551.
  72. Fister, J., Breedis, J., and Winter, J., “Gold Leadwire Bonding of Unplated C194,” 20th Proc. IEEE Electronic Components Conf., San Diego, California, March 30-31, 1982, pp. 249-253.
  73. Abbott, D.C., Brook, R.M., McLellan, N., and Wiley, J.S., “Palladium as a Lead Finish for Surface Mount Integrated Circuits,” IEEE Trans. CHMT, Vol. 14, Sept. 1991, pp. 567-572. Also, see IEEE ECTC, 1995, (Abbott and Romm), pp. 1068-1072.
  74. Hall, P.M., and Morabito, J.M., “Diffusion Problems in Microelectronics Packaging,” Thin Solid Films, Vol. 53, 1978, pp. 175-182.
  75. Finley, D.W., Ray, U., Artaki, I., Vianco, P., Shaw, S., Reyes, A., and Haq, M., “ Assessment of Nickel-Palladium Finished Components for Surface Mount Assembly Applications,” Proc.1995 SMI Technical Program, San Jose, California, Aug. 29-31, 1955, pp. 941-953.
  76. Theide, H.P., “Bonding Wire Today,” 2nd Ann. International Electronics Packaging Conf. IEPS, Nov. 15-17, 1982, San Diego, California, pp. 686-705.
  77. Bischoff, A., and Aldinger, F., “Reliability Criteria of New Low-Cost Materials for Bonding Wires and Substrates,” 34th Proc. IEEE Electronic Components Conf., New Orleans, Louisiana, May 14-16, 1984, pp.411-417.
  78. Stemple, D.K., and Olsen, D.R., “Kinetics of Palladium-Aluminum Intermetallic Formation,” 1983 ISHM Interconnect Conf., Session 2, Paper 2, Welches, Oregon, July 27-28, 1983.
  79. Kyocera Intl. KCILLIUM, A Report on Properties and Test Results, Sept. 5, 1980.
  80. James, K., “Reliability Study of Wire Bonds to Silver Plated Surfaces,” IEEE Trans. on Parts, Hybrids and Packaging, Vol. 13, 1977, pp. 419-425.
  81. Kawanobe, T., Miyamoto, K., Seino, M., and Shoji, S., “Bondability of Silver Plating on IC Leadframe,” 35th Proc. ECC, Washington, D.C., May 20-22, 1985, pp.314-318.
  82. Baker, J.D., Nation, B.J., Achari, A., and Waite, G.C., “On the Adhesion of Palladium Silver Conductors under Heavy Aluminum Wire Bonds,” Intl. J. for Hybrid Microelectronics, Vol. 4, 1981, pp. 155-160.
  83. Kamijo, A., and Igarashi, H., “Silver Wire Ball Bonding and Its Ball/Pad Interface Characteristics,” 35th Proc. IEEE Electronic Components Conf., Washington, D.C., May 20-22. 1985, pp. 91-97.
  84. Jellison, J.L., “ Susceptibility of Microwelds in Hybrid Microcircuits to Corrosion Degradation,” 13th Annual Proc. IEEE Reliability Physics Symp., Las Vegas, Nevada, April 1975, pp. 70-79.
  85. Kahkonen, H., and Syrjanen, E., “Kirkendall Effect and Diffusion in the Aluminum Silver System,” J. Matls. Sci. Lett., Vol.5, 1970, p.710.
  86. Hermansky, V., “Degradation of Thin Film Silver-Aluminum Contacts,” Fifth Czech. Conf. On Electronics and Physics, Czechoslovakia, October 16-19, 1972, pp. II. C-11.
  87. Shukla, R., and Singh-Deo, J., “Reliability Hazards of Silver-Aluminum Substrate Bonds in MOS Devices,” 20th Annual Proc. IEEE IRPS, San Diego, California, March 30 to April 1, 1982, pp.122-127.
  88. Nazarova, N.K., Zakharova, S.E., Kharitonov, E.V., and Shetlmakh, S.V., “Degradation in Ag-Al Microcontacts on Prolonged Heating,” Microelectronika, Vol. 16, July-August, 1987, pp. 320-325.
  89. Palmer, D.W. and Ganyard, F.P., “Aluminum Wire to Thick Film Connections for High Temperature Operations,” IEEE Trans. on Components, Hybrids, and Manufacturing Technology, Vol. 1, Sept. 1978, pp. 219-222.
  90. Palmer, D.W., “Hybrid Microcircuitry for 300 C Operation,” IEEE Trans. on Parts, Hybrid and Packaging, Vol. 13, Sept. 1977, pp. 252-257.
  91. Jellison, J.L., “Kinetics of Thermocompression Bonding to Organic Contaminated Gold Surfaces,” IEEE Trans. on Parts, Hybrids, and Packaging, Vol.13, 1977, pp. 132-137.
  92. Tse, P.K., and Lach, T.M., “Aluminum Electromigration of 1-mil Bond Wire in Octal Inverter Integration Circuits,” Proc. 45th IEEE ECTC, Las Vegas, Nevada, May 1955, pp. 900-905.
  93. Aday, J., Johnson, R.W., Evans, J.L., and Romanczuk, C., “Wire Bonded Thich Film Silver Multilayers for Under-the-Hood Automotive Applications,” Intl. J. of Microcircuits and Electronic Packaging, Vol. 17, 1994, pp. 302-311.
  94. Sow, Y.K., Yasmin, A, and Dias, R., “ Improving Gold-Silver Wirebond Integrity in Plastic Packages,” Proc. of ECTC, Orlando, Florida, June 1-4, 1993, pp. 341-347.
  95. Clarke, R.A., and Lukatela, V., “Inadequency of Current Mil-STD Wire Bond Certification Procedures,” Proc. 1991 Intl. J. Microcircuits and Electronic Packaging, Vol. 15, pp. 87-96.
  96. Harmon, G.G., and Wilson, C.L., “Materials Problems Affecting Reliability and Yield of Wire Bonding in VLSI Devices,” Proc. 1989 MRS, Electronic Packaging Materials Science IV, Vol. 154, San Diego, California, April 24-29, 1989, pp. 401-413.
  97. Iannuzzi, M., “Bias Humidity Performances and Failure Mechanisms of Non-Hermetic Aluminum SICs in an Environment Contaminated with CI2,” Proc. Reliability Physics Symp., San Diego, California, March 30-31, 1982, pp.16-26.
  98. Abbott, W.H., “Effects of Industrial Air Pollutants on Electrical Contact Materials,” IEEE Trans. on Parts, Hybrids, and Packaging, Vol. 10, March 1974, pp.24-27.
  99. Memis, I., “Quasi-Hermetic Seal for IC Modules,” 30th Proc. Electronic Components Conf., San Francisco, California, April, 28-30, 1980, pp. 121-127.
  100. Newsome, J.L., Oswald, R.G., and Rodrigues de Miranda, W.R., “Metallurgical Aspects of Aluminum Wire Bonds to Gold Metallization,” 14th Annual Proc. Rel. Phys., Las Vegas, Nevada, April 20-22, 1976, pp. 63-74.
  101. MIL-STD 883, Test Methods and Procedures for Microelectronics, Method 5008-Test Procedures for Hybrid and Multichip Microcircuits.
  102. McDonald, N.C., and Palmberg, P.W., “Application of Auger Electron Spectroscopy for Semiconductor Technology,” Intl. Electron Devices Meeting, Washington, D.C., Oct. 11-13, 1971, pp. 42-43.
  103. McDonald, N.C., and Riach, G.E., “Thin Film Analysis for Process Evaluation,” Electronic Packaging and Production, April 1973, pp. 50-56.
  104. Czanderna, A.W. (ed.), Methods of Surface Analysis VI, Elsevier Scientific Publishing Co, New York, 1975, Chap. 5, pp. 212-222.
  105. James, H.K., “Resolution of the Gold Wire Grain Growth Failure Mechanism in Plastic Encapsulated Microelectronic Devices,” IEEE Trans. on Components, Hybrids, and Manufacturing Technology, Vol. CHMT-3, Sept. 1980, pp.370-374
  106. Endicott, D.W., James, H.K., and Nobel, F., “Effects of Gold-Plating Additives on Semiconductor Wire Bonding,” Plating and Surface Finishing V, Nov. 1981, pp. 58-61.
  107. Okumara, K., “Degradation of Bonding Strength (Al Wire-Au Film) by Kirkandall Voids,” Electrochem. Soc., Vol. 128, 1981, pp. 571-575.
  108. Wakahayashi, S., Murata, A., and Wakobauashi, N., “Effects of Grain Refiners in Gold Deposits on Aluminum Wire-Bond Reliability,” Plating and Surface Finishing V., Aug. 1982, pp. 63-68.
  109. Evans, K.L., Guthrie, T.T., and Hays, R.G., “Investigation of the Effect of Thallium on Gold/Aluminum Wire Bond Reliability,” Proc. ISTFA, Los Angeles, California, 1984, pp. 1-10.
  110. Huettner, D.J., and Sanwald, R.C., “The Effect of Cyanide Electrolysis Products on the Morphology and Ultrasonic Bondability of Gold,” Plating and Surface Finishing, Aug. 1972, pp. 750-755
  111. Joshi, K.C., Sanwald, R.C., and Annealing, H., “Behavior of Electro-Deposited Gold Containing Entrapments,” J. Electronic Materials, Vol. 2, 1973, pp. 533-551
  112. 112.Kawanobe, T., Miyamoto, K., Seino, M., and Shoji, S., “Bondability of Silver Plating on IC Leadframe,” Proc. 20th IEEE Electronic Components Conf., Washington, D.C., May 20-22, 1985, pp. 314-318.
  113. Shih, D-Y., and Ficalora, P.J., “The Reduction of Au-Al Intermetallic Formation and Electromigration in Hydrogen Environments,” 16th Annual Proc. IRPS, San Diego, California, April 18-20, 1978, pp. 268-272.
  114. Murcko, R.M., Susko, R.A., and Lauffer, J.M., “Resistance Drift in Aluminum to Gold Ultrasonic Wire Bonds,” IEEE Trans. CHMT, Vol. 14, Dec. 1991, pp. 843-847.
  115. Nelson, G.C., and Holloway, P.H., “Determination of the Low Temperature Diffusion of Chromium Through Gold Films by Ion Scattering Spectroscopy and Auger Electron Spectroscopy,” ASTM Special Technical Publications 596, Surface Analysis Techniques, 1976, pp. 68-77.
  116. Loo, M.C., and Su, K., “Attach of Large Dice with Ag/Glass in Multilayer Packages,” Hybrid Circuits (UK), No. 11, Sept. 1986, pp. 8-11.
  117. Hall, P.M., and Morabito, J.M., “Diffusion Problems in Microelectronics Packaging,” Thin Solid Films, Vol. 53, 1978, pp. 175-182.
  118. Bastl, Z., Zidu, J., and Rohacek, K., “Determination of the diffusion coefficient of aluminum along the grain boundaries of gold films by the surface accumulation method,” Thin Solid Films, Vol. 213, 1992, pp.103-108.
  119. Casey, G.J., and Endicott, D.W., “Control of Surface Quality of Gold Electrodeposits Utilizing Auger Electron Spectroscopy,” Plating and Surface Finishing, V-67 July 1980, pp. 39-42.
  120. McGuire, G.E., Jones, J.V., and Dowell, H.J., “Auger Analysis of Contaminants that Influence the Thermocompression Bonding of Gold,” Thin Solid Films, Vol. 45, 1977, pp. 59-68.
  121. Endicott, D.W., and Casey, G.J., “High Speed Gold Plating from Dilute Electrolytes,” Proc. American Electroplaters Soc., paper 1-d3, 1979.
  122. Dini, J.W., and Johnson, H.K., “Influence of Codeposited Impurities on Thermocompression Bonding of Electroplated Gold,” Proc. ISHM Symp., Los Angeles, California, Oct. 1979, pp. 89-95.
  123. Panousis, N.T., “Thermocompression Bondability of Bare Copper Leads,” IEEE Trans. on Components, Hybrids and Manufacturing Technology, Vol. CHMT-1, 1978, pp. 372-376.
  124. Panousis, N.T., and Hall, P.M., “Apjplication of Grain Boundary Diffusion Studies to Soldering and Thermocompression Bonding,” Thin Solid Films, Vol. 53, 1978, pp. 183-191.
  125. Dini, J.W., and Johnson, H.R., “Optimization of Gold Plating for Hybrid Microcircuits,” Plating and Surface Finishing, V-67 Jan. 1980, pp. 53-57.
  126. Spencer, T.H., “Thermocompression Bond Kinetics—The Four Variables,” Intl. J. Hybrid Microelectronics, Vol. 5, 1982, pp. 404-408.
  127. Panousis, N.T., and Bunham, H.B., “Bonding Degradation in Tantalum Nitride-Chromium Gold Metallization Systems,” 11th Annual Proc. Reliability Physic, Los Vegas, Nevada, April 3-5, 1973, pp. 21-25.
  128. Harman, G.G., “The Use of Acoustic Emission in a Test for Beam-Lead, TAB, and Hybrid Chip Capacitor Bond Integrity,” IEEE Trans. on Parts, Hybrids, and Packaging, Vol. 13, 1977, pp. 116-127.
  129. Holloway, P.H., and Long, R.I., “On Chemical Cleaning for Thermocompression Bonding,” IEEE Trans. on Parts, Hybrids, and Packaging, Vol. 11, 1975, pp.53-88.
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