New radiation issues occur in advanced non-volatile memory technologies.  Although charge pump total dose failure levels are higher, functional interrupt and direct charge loss from heavy ions have shifted the dominant problem from total dose to heavy ion effects.  This work will evaluate these effects for two NAND and one NOR memory technology that use feature sizes of 90 to 130 nm.  Experimental work and computer modeling will be used to evaluate charge loss effects, along with the effects of partial programmed state charge loss on data retention characteristics.