+ View the NASA Portal NEPP Website Search   Powered By Google Your Path: Home » Parts » Parts Experts   Parts Publications Index   Parts Publications by Area of Emphasis   Parts Links Parts Experts   Parts Manufacturers   Focused Parts Issue Portals & NPSL   GSFC Parts Engineering Resources and Contacts   GSFC Specifications and Qualified Parts List Directory   Search         BACK to Publication List Measurement of the Effective Sensitive Volume of FAMOS Cells of an Ultraviolet Erasable Programmable File Name: RadPROM-00.pdf | Date Submitted: 09/19/01   File Size: 158KB Document Author Leif Scheick - Leif.Z.Scheick@jpl.nasa.gov Jet Propulsion Laboratory Phone: 818 354-3272 | FAX: 818 393-4559 [Additional User Information] Download "Measurement of the Effective Sensitive Volume of FAMOS Cells of an Ultraviolet Erasable Programmable" (158KB) Now.   Description:   Abstract: A method is described for measuring the sensitive volume of the oxide which makes up the collection region for erasure surrounding the floating gate of the FAMOS cell of a Ultraviolet erasable Programmable Read Only Memory (UVPROM) using the data acquired from the output of the pins of the device. A direct measurement of the dose required to erase the Floating gate Avalanche injected Metal Oxide Silicon (FAMOS) cell yields a measurement of the volume of oxide which collects the charge. Another method using target theory to determine the sensitive volume of the device is also presented with good agreement between the methods. The sensitive volume depends on the LET of the radiation. The ramifications for microdosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.   Related Project(s): ERC (Electronic Radiation Characterization)   Related Area(s) of Emphasis: High Performance Processor and Memory Technologies Radiation Hardness Assurance     NEPP Program Manager: Michael J. Sampson Responsible NASA Official: Michael J. Sampson Webmaster: Carl M. Szabo, Jr.       Last Updated: November 29, 2007