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Download "Video: Electronic Packaging Technology for SiC based High Temperature Micro-systems - Part 2" (2580KB) Now.
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Description:
NEPP Virtual Conference
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Abstract:
Gold thick-film metallization based electronic packaging components, which include electrical interconnection (thick film printed wires and thick film metallization based wire-bond) system and a conductive SiC die-attach scheme, have been validated for high temperature (up to 500 oC) chip level packaging. During a 1500-hour test in atmospheric oxygen with and without DC bias, the basic interconnection elements demonstrated low and relatively stable resistance in a temperature range from room temperature to 500oC. The die-attach scheme was successfully validated by testing a SiC high temperature diode, which was attached to a ceramic substrate using gold thick-film material as conductive bonding layer. The attached SiC diode was tested at 500 oC in oxidizing air for 1000 hours setting records of both high temperature electronic packaging and high temperature device testing. A brief discussion of the scope of high temperature electronic packaging program at NASA Glenn Research Center will also be covered.
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Related Project(s):
EPAC (Electronic Packaging)
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Related Area(s) of Emphasis:
Substrates and Embedded Passives Technologies
High Density Packaging Technologies
Advanced Interconnect Reliability
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