Thick and Thin Film Materials Based Chip Level Packaging for High Temperatures SiC Sensors and Devic
File Name: HiTEC00paper2.PDF | Date Submitted: 09/14/01
File Size:
222KB
Document Author
Liangyu Chen-Author PI - Liangyu.Chen@grc.nasa.gov Glenn Research Center
Phone: 216-433-6458 | FAX: 216-433-8000
Abstract:
Gold thick-film material was used for electrical interconnections (thick film printed wires and thick film metallization based wire-bond) and conductive die-attach for high temperature (up to 500°C) chip level packaging. During a 1500-hour test in atmospheric oxygen with and without bias, these basis interconnection elements demonstrated low and relatively stable resistance at both room temperature and 500°C. A SiC test diode with an annealed nickel thin-film ohmic contact on the backside was successfully attached to a ceramic substrate using gold thick-film material as conductive bonding layer. The attached SiC diode has been tested at 500°C in oxidizing air for 1000 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward dynamic resistance of the attached diode, during and after the high temperature test, remained desirably low and stable over the entire course of a 1000-hour test.
Related Project(s):
EPAC (Electronic Packaging)
Related Area(s) of Emphasis:
Extreme Environment Electronics and Packaging
Thermal Management for Reliability
Advanced Interconnect Reliability
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