Abstract:
2Gb NAND flash devices were tested for sensitivity to both program and read disturb conditions.
This disturb testing is part of the overall reliability evaluation of these devices for use on NASA
missions. Radiation evaluation for these devices has already been documented [Irom].
Disturb testing is designed to study the robustness of the data storage of the flash cells when the
state of a nearby cell is being changed, either through programming or reading. A disturb failure
means that the initial (and expected) state of the cell has been changed (disturbed) to the opposite
state as a result of programming or reading the nearby cells. Disturb failures are usually soft
failures that require additional device commands to repair.
Flash manufacturers acknowledge disturb failures can occur on their devices and try to provide
users with guidance on how to address them. For the high reliability nature of NASA missions, a
quantitative understanding of the possible degree of disturb failures is required. Such quantitative
understanding will guide device screening and procurement requirements as well as possible
system mitigation implementations.
Related Project(s):
Related Area(s) of Emphasis:
High Performance Processor and Memory Technologies
Advanced and Emerging Technologies
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