Abstract:
The use of power MOSFETs in space can be challenging due to the ubiquitous and diverse nature of radiation that these devices encounter. Radiation can degrade the electrical properties of the device, which depending on the type and severity of the radiation can render the device non-functional. Not surprisingly, testing these devices can be complicated. Radiation testing provides a method for characterizing, or at least highlighting, radiation susceptible devices planned for use in space missions. Finally, these devices are being fabricated using evolving technologies, so keeping data timely and relevant is important.
The purpose of this document is two-fold. First, the document lists and discusses many of the issues important to understand when testing power MOSFETs. Second, the recommended approach for using radiation test data to define the device application requirements is presented. These include SEE rate calculation, data analysis, and derating guidelines. A significant amount of work has been done on the basic effects of SEB and SEGR. References are supplied where seminal work has been done on the topic at hand. The reader is urged to review the references if the testing issues or mission application at hand are complex.
Related Project(s):
Related Area(s) of Emphasis:
Advanced and Emerging Technologies
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