In order to meet power, mass, and overall mission requirements, current NASA mission applications require the use of microelectronic devices at temperatures much above the range of typical commercial characterization limits. Certain electronic components including passive and active devices, designated circuits, mission modules, and other specific test articles such as MEMS and GaAs devices need to be characterized in terms of their performance under various test parameters including low and high temperatures, thermal cycling, and aging. Degradation mechanisms and failure modes, which would influence the operation and reliability of the tested devices and systems also need to be determined and utilized to assess the risks associated with exposure to extreme temperatures and to identify the enabling technologies needed to improve operation, reliability, and lifetime. Of particular interest are emerging scaled technologies with feature sizes below 0.25 mm where metal grain size and void propagation plays a critical role in the overall performance and reliability of these structures.