+ View the NASA Portal NEPP Website Search   Powered By Google Your Path: Home » Area of Emphasis Detail (AOE)   Search         BACK to Publication List A Technique for Assessing the Moisture Resistance of PEMs Using MOS Test Structures File Name: TECHNIQUE.DOC | Date Submitted: 03/05/02   File Size: 1019KB Document Author Alexander Teverovsky - ateverov@pop300.gsfc.nasa.gov GSFC on-site Contractor Phone: 301 286-9691 | FAX: None On File [Additional User Information] Download "A Technique for Assessing the Moisture Resistance of PEMs Using MOS Test Structures" (1019KB) Now.   Description: paper   Abstract: A new technique for assessing the moisture resistance of PEMs is based on measurements of a time-varying capacitance of an MOS-structure with a large perimeter-to-area ratio of the metal electrode.  When an inversion voltage is applied, the capacitance of the structure will increase with time due to lateral charge spreading.  The rate of the charge redistribution and the magnitude of the change in capacitance depend on the moisture content on the die surface and on some special features of the molding compound - die interaction.  These conditions can be characterized by measuring the specific resistivity of the die-molding compound interface, rs.  The C(t) technique extends the limit of rs measurements up to 1021 ohms.  Experiments with different encapsulating materials proved the effectiveness of this technique for packaging evaluations.  A good correlation between rs and median time-to-corrosion failures was shown.   Related Project(s): EPAC (Electronic Packaging) EPAR (Electronic Parts)   Related Area(s) of Emphasis: Advanced Sensors/Detectors     NEPP Program Manager: Michael J. Sampson Responsible NASA Official: Michael J. Sampson Webmaster: Carl M. Szabo, Jr.       Last Updated: August 20, 2008