NASA Parts Selection List (NPSL)

NOTE: Unless specifically stated within the parts selection tables of the NPSL, listing of a device technology herein does NOT imply/guarantee Radiation Hardness Assurance (RHA). Applications concerned with a device's ability to tolerate exposure to various forms of space radiation (e.g., total ionizing dose, single event effects, etc.) should be reviewed and have the device assessed by the Program's radiation assurance experts. The following resources may also be consulted for initial guidance:

NASA Goddard Radiation Effects and Analysis
Jet Propulsion Laboratory Radiation Effects

Transistor Types

The following MIL-PRF-19500 transistor types are available for selection:

Type	Description
*LOW POWER*
NPN	Transistor, Silicon, 0.3-2.0 W
	Transistor, Silicon, Chopper, High Speed, 0.3 W
	Transistor, Silicon, Matched Pair, 0.5-0.6 W
PNP	Transistor, Silicon, 0.2-1.5 W
	Transistor, Silicon, Chopper, High Speed, 0.4 W
	Transistor, Silicon, Matched Pair, 0.6 W
NPN/PNP	Transistor, Dual, Complementary
*HIGH POWER*
NPN	Transistor, Silicon, 5.0-350 W
	Transistor, Silicon, Darlington, 5 - 175 W
PNP	Transistor, Silicon, 14-115 W
PNP	Transistor, Silicon, Darlington, 32 - 85 W
*FIELD EFFECT TRANSISTOR* *(FET)*
N-Channel	Field Effect Transistor (FET), 0.3 - 0.4 W
N-Channel	MOSFET, Power, 1.4 - 150 W
P-Channel	Field Effect Transistor (FET), 0.5 - 4.0 W
P-Channel	MOSFET, Power, 6.25 - 125 W
*RADIO FREQUENCY (RF)*
NPN	Transistor, Silicon, 0.2 - 1.0 W
PNP	Transistor, Silicon, 0.2 W
*OPTOCOUPLER*	Optically Coupled Isolators, < 1.0 W

NEPP Program Manager:	Chuck Barnes, Jet Propulsion Laboratory
Responsible NASA Official:	Michael Sampson, NEPAG Manager
Website Comments:	Web Development Team
Last Modified:	February 1, 2016

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